Effect of NIP and PIN Architectures on the Performance of FASnI3 Perovskite Solar Cells

Abstract

This study explore the impact of NIP and PIN architectures on the performance of FASnI₃-based perovskite solar cells (PSCs) through simulations using the SCAPS-1D software. FASnI₃ is a promising material for PSCs due to its
suitable bandgap, better thermal stability, and lower toxicity compared to Pb-based perovskites. The optimization of the NIP structure involves variations in donor density and the thickness of the FASnI₃ layer. A donor density in the form of a
shallow density acceptor of 10¹⁷ cm⁻³ leads to optimal performance improvement. Comparisons between NIP and PIN configurations show that although the NIP architecture outperforms PIN with Spiro-OMeTAD as hotel transport layer (HTL) material, the choice of HTL significantly affects the efficiency of the PIN architecture. PTAA is identified as the best HTL for the PIN structure, offering higher efficiency. Additionally, the study also investigates the optimization of the
capture cross-section value to 10⁻¹⁹, resulting in maximum solar cell performance for all HTL material options. The efficiencies of solar cells with HTL materials PTAA, PEDOT:PSS, and Spiro-OMeTAD are 22.54%, 16.78%, and 4.58%,
respectively, with Au electrodes.