Effect of Hole Transport Layer Acceptor Density on the Performance of FASnI3 Perovskite Solar Cells
Keywords:
Perovskite solar cells, SCAPS-1D simulation, Hole transport materialsAbstract
Lead-free perovskites have emerged as a highly promising alternative for efficient and environmentally friendly photovoltaics due to their inherent optoelectronic properties. This study presents a numerical investigation into structured n–i–p inorganic perovskite photovoltaics using the Solar Cell Capacitance Simulator (SCAPS-1D). Various carbon materials including single-walled carbon nanotubes (SWCNT), graphene oxide (GO), and reduced graphene oxide (rGO) were employed as candidates for the hole transport layer (HTL) with FASnI3 serving as the active material and TiO2 as the electron transport layer (ETL). This study investigates the impact of acceptor density on the performance of perovskite solar cells (PSCs) using various hole transport layers (HTLs), specifically SWCNT, GO, and rGO. The results indicate that increasing the acceptor density of particular HTL enhances the power conversion efficiency (PCE), in which GO shows a PCE increase from 17.99% to 19.61% as the acceptor density rises from NA=1015 cm−3 to NA =1022 cm−3 while SWCNT and rGO do not. This study emphasizes the critical role of acceptor density in optimizing PSC performance and its significance for future research and the development of advanced HTL materials.
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